The synthesis of a series of four new compounds containing fluorenyl chromophores is presented, along with the results of spectroscopic and photochemical studies aimed at understanding the two-photon absorption properties and energetics of their electronically excited states. The molecular structures of the compounds were systematically varied to allow comparison of molecules possessing high and low molecular symmetry, short and long alkyl chains, and a fluorenyl conjugated π-system. Solvent-dependent absorption and emission were investigated along with π-conjugation length. Preliminary measurements of two-photon absorption (2PA) using a two-photon fluorescence method indicate that these chromophores exhibit high two-photon absorptivity. A symmetrical molecule (3), possessing a relatively large π-conjugated system, flanked on either side by electron-withdrawing groups (benzothiazole), exhibited a peak 2PA cross section (δ) of 6000 × 10 -50 cm 4 s photon -1 molecule -1 at 600 nm. Excitation anisotropy studies revealed the position of the S 0 f S 1 and S 0 f S 2 electronic transitions. Consistent with quantum mechanical selection rules, the two-photon allowed transition (S 0 f S 2 ) was dominant.

Current metal integration process normally uses hard mask for dry etch process instead of resist to compensate thin resist thickness. As the pattern size becomes smaller, thinner resist thickness is required to get sufficient lithography process window. But this trend increases a risk of systematic hard defect like the metal line bridge in damascene process because of consumption in dielectric material during dry etch process.The sub-32nm patterning with the single exposure is almost on the edge with the 193nm immersion lithography. The smaller lithography CD makes the aerial image contrast worse, which means higher DC level in the unexposed area. This higher DC level, latent image, can sacrifice the resist thickness in the unexposed area and this recessed resist thickness is very harmful for the etch process with the current hard mask which may induce the metal line bridge.Although OPC verification step checks potential hot spot during mask type out flow, there is no predictable method to detect systematic potential defects described above. In this paper, we proposed a new method to detect such potential defects and discussed the performance with wafer result. With this predictable model based search method, the robust patterning process in the sub-32nm node can be developed.

Multicolored electroluminescent (EL) devices has been realized utilizing poly((1-dodecyloxy-4-methyl-1,3-phenylene)(2,5"-terthienylene))( hereafter, mPTTh polymer) as an emitting layer and tris(8-hydroxyquinoline) aluminum (A1q3) as an electron transport layer. A single layer EL device of mPTTh polymer emits orange-colored light. EL intensity increases as the thickness of A1q3 layer increases up to 30 nm, but the emission color becomes diversified when the A1q3 layer thickness is greater than 30 nm since the relative peak intensity of green EL from Alq3 layer grows. EL color is changed from orange to geenish orange depending on the thickness of A1q3 layer. EL efficiency of the double layer device was greatly enhanced by 3000 times in compared to that of single layer device. Alq3 layer in device acts as an hole blocking electron transporting layer and an emitting layer as a function ofthe thickness ofAlq3 layer.

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