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We present nanometer-scale physical structures and analysis algorithms for characterizing tip width and shape for critical dimension atomic force microscopy (CD-AFM). Automated CD-AFM measurements will be used in the future, and a robust methodology is demonstrated for ensuring long-term repeatability of width measurements on sub-100 nm structures. Structures are designed and chosen for their width uniformity on the sub-nm scale, as well as for their well defined shapes that can be deconvolved from the scan data to yield a precise image of the tip. We address the contributions of tool precision and linearity, tip shape and line-edge roughness of the calibration artifact to overall measurement stability.

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We present 3-dimensional atomic force profiler (AFP) measurements on die-scale flatness (20 mm x 20 mm) after copper and STI CMP. True metrology is achieved for patterned wafers. Wafers are vacuummounted on a flat chuck, as they would be in a stepper, so wafer warpage and strain-related non-planarity are not present. The results of this new technique are compared against current measurement techniques. For logic, memory and System-on-a-chip, we discuss the implications of wafer planarity going into subsequent photolithography steps.