Semiconductor industry is currently facing with thefact that conventional submicron CMOS technology isapproaching the end of their capabilities, at least when it comes toscaling the dimensions of the components. Therefore, muchattention is paid to device technology that use new technologicalstructures and new channel materials. Modern technologicalprocesses, which mainly include ultra high vacuum chemicalvapor deposition, molecular beam epitaxy and metal-organicmolecular vapor deposition, enable the obtaining of ultrathin,crystallographically almost perfect, strained layers of high purity.In this review paper we analyze the role that such layers have inmodern CMOS technologies. It’s given an overview of thecharacteristics of both strain techniques, global and local, withspecial emphasis on performance of NMOS biaxial strain andPMOS uniaxial strain. Due to the improved transport propertiesof strained layers, especially high mobility of charge carriers, theemphasis is on mechanisms to increase the charge mobility ofstrained silicon and germanium, in light of recent developments inCMOS technology.

Electric wheelchairs are designed to aid paraplegics. Unfortunately, these can not be used by persons with higher degree of impairment, such as quadriplegics, i.e. persons that, due to age or illness, can not move any of the body parts, except of the head. Medical devices designed to help them are very complicated, rare and expensive. In this paper a microcontroller system that enables standard electric wheelchair control by head motion is presented. The system comprises electronic and mechanic components. A novel head motion recognition technique based on accelerometer data processing is designed. The wheelchair joystick is controlled by the system’s mechanical actuator. The system can be used with several different types of standard electric wheelchairs. It is tested and verified through an experiment performed within this paper

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