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The laser mass spectrometer has been used to study the vapor composition of various compounds of arsenic and antimony with the elements of Group VIa. It is shown that in some cases there is a direct correlation between the vapor composition and the structure of the condensed phase. The mechanism of the laser-induced vaporization is discussed; it is shown that the critical region (or vicinity) can be reached in laser-solid interactions.

The chemical nature of semitransparent (∼125 Å) palladium on silicon Schottky-barrier-type devices was determined by complementary AES and ISS techniques. Postdeposition analyses of metal-semiconductor (MS) and metal–thin-insulator–semiconductor (MIS) devices prepared without heat treatment showed that palladium silicide is formed in the MS structures, while the presence of an ultrathin (∼30 Å) purposefully grown semiconductor oxide film inhibits the chemical reaction between Pd and Si in the metal overlayer. Chemical bonding information extracted from the AES data was correlated with barrier-height measurements obtained from capacitance-vs-voltage (C-V) and current-vs-voltage (I-V) electrical characteristics of these devices.

The author argues that the concepts of bond energy and bond-dissociation energy be presented to undergraduate physical and organic chemistry students in enough detail that some real understanding results.

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