SignificanceCharge density waves (CDWs) are simple periodic reorganizations of charge in a crystal, and yet they are still poorly understood and continue to bear surprises. External perturbations, such as strain or pressure, can in principle push a CDW phase into a different ordering geometry. However, engineering this type of quantum criticality has been experimentally challenging. Here, we implement a simple method for straining bulk materials. By applying it to 2H-NbSe2, a prototypical CDW system studied for decades, we discover two dramatic strain-induced CDW phase transitions. Our atomic-scale spectroscopic imaging measurements, combined with theory, reveal the distinct roles of electrons and phonons in forming these emergent states, thus opening a window into the rich phenomenology of CDWs.

High-Tc superconductivity in cuprates is generally believed to arise from carrier doping an antiferromagnetic Mott (AFM) insulator. Theoretical proposals and emerging experimental evidence suggest that this process leads to the formation of intriguing electronic liquid crystal phases 1 . These phases are characterized by ordered charge and/or spin density modulations, and thought to be intimately tied to the subsequent emergence of superconductivity. The most elusive, insulating charge-stripe crystal phase is predicted to occur when a small density of holes is doped into the charge-transfer insulator state 1-3 , and would provide a missing link between the undoped parent AFM phase and the mysterious, metallic "pseudogap". However, due to experimental challenges, it has been difficult to observe this phase. Here, we use surface annealing to extend the accessible doping range in Bi-based cuprates and achieve the lightly-doped charge-transfer insulating state of a cuprate Bi2Sr2CaCu2O8+x. In this insulating state with a charge transfer gap at the order of ~1 eV, using spectroscopic-imaging scanning tunneling microscopy, we discover a unidirectional charge-stripe order with a commensurate 4a0 period along the Cu-O-Cu bond. Importantly, this insulating charge-stripe crystal phase develops before the onset of the pseudogap and the formation of the Fermi surface. Our work provides new insights into the microscopic origin of electronic inhomogeneity in high-Tc cuprates.

Interest in the superconducting proximity effect has recently been reignited by theoretical predictions that it could be used to achieve topological superconductivity. Low-Tc superconductors have predominantly been used in this effort, but small energy scales of ~1 meV have hindered the characterization of the emergent electronic phase, limiting it to extremely low temperatures. In this work, we use molecular beam epitaxy to grow topological insulator Bi2Te3 in a range of thicknesses on top of a high-Tc superconductor Fe(Te,Se). Using scanning tunneling microscopy and spectroscopy, we detect Δind as high as ~3.5 meV, which is the largest reported gap induced by proximity to an s-wave superconductor to-date. We find that Δind decays with Bi2Te3 thickness, but remains finite even after the topological surface states had been formed. Finally, by imaging the scattering and interference of surface state electrons, we provide a microscopic visualization of the fully gaped Bi2Te3 surface state due to Cooper pairing. Our results establish Fe-based high-Tc superconductors as a promising new platform for realizing high-Tc topological superconductivity.

The exploration of new materials, novel quantum phases, and devices requires ways to prepare cleaner samples with smaller feature sizes. Initially, this meant the use of a cleanroom that limits the amount and size of dust particles. However, many materials are highly sensitive to oxygen and water in the air. Furthermore, the ever-increasing demand for a quantum workforce, trained and able to use the equipment for creating and characterizing materials, calls for a dramatic reduction in the cost to create and operate such facilities. To this end, we present our cleanroom-in-a-glovebox, a system that allows for the fabrication and characterization of devices in an inert argon atmosphere. We demonstrate the ability to perform a wide range of characterization as well as fabrication steps, without the need for a dedicated room, all in an argon environment. Finally, we discuss the custom-built antechamber attached to the back of the glovebox. This antechamber allows the glovebox to interface with ultra-high vacuum equipment such as molecular-beam epitaxy and scanning tunneling microscopy.

Superconducting topological crystalline insulators (TCI) are predicted to host new topological phases protected by crystalline symmetries, but available materials are insufficiently suitable for surface studies. To induce superconductivity at the surface of a prototypical TCI SnTe, we use molecular beam epitaxy to grow a heterostructure of SnTe and a high-Tc superconductor Fe(Te,Se), utilizing a "buffer" layer to bridge the large lattice mismatch between SnTe and Fe(Te,Se). Using low-temperature scanning tunneling microscopy and spectroscopy, we measure a prominent spectral gap on the surface of SnTe, and demonstrate its superconducting origin by its dependence on temperature and magnetic field. Our work provides a new platform for atomic-scale investigations of emergent topological phenomena in superconducting TCIs. Introduction.