This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good improvement on its result of sub-threshold leakage current, I OFF, and drive current, I ON for different dielectric constants (k). The virtual design and fabrication of the device were performed by using Athena module. While electrical characteristic performance was simulated by using Atlas module of SILVACO software. Physical models of the 18nm NMOS were used for simulation from Al 2 O 3 , HfO 2 , and TiO 2 as the material gate dielectric, with TiSi 2 as the metal gate, which provide higher physical thickness that able to reduce the sub-threshold leakage current I OFF . Thus, excellent dielectric properties such as high-K constant, low I OFF , higher I ON , threshold voltage V TH , and electrical characteristics were demonstrated. From the simulation results of I ON and I OFF, it was proven that HfO 2 is the best dielectric material with combination of metal gate, TiSi 2 .

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