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Prepared for the U.S. Department of Energy under Contract Number DEAC03-76SF00098 DISCLAIMER This document was prepand as an account of work sponsored by the Unitcd States GOVMIIEXIL While this document is believed to contain comct information, neither LIK United Starcs Government nor any agency thereof. nor The Regents of the University of Califcda, aor any of tbcir cmplo)ecs. makes any warraoty. cxprcss or implied, or assums any legal responsibility for the accuracy, completeness. or u s c f u l r~~~ of any information, appamw. product. or p-disclowd. or rcpnscnts chat its use would not infringe privately owned rights. Reference herein to any specific commercial product, process. or scrvice by its trade name, trademark. manufacturer, or o d m k c. doez not necessarily constir~tc or imply its endorsement, recommendation. or favoring by the United States Government or any agency thereof. or The Regents of the University of Cat'fomia The views and opinions of authors cxprcsscd herein do not newsarily statc or rcflca thoK of ch Unitcd ScarcS Government or any agency h f. or The Regents of

Latest developments in solution processed hole injection layer (HIL) technology that has enabled near‐ohmic injection into OLED stacks will be presented. Some of the advantages inherent to solution processing will be demonstrated including the planarization of low cost engineered OLED substrates.