Based on the interfacial-layer and quantum-mechanical (QM) carrier transport approach, a theoretical model is proposed to predict the anomalous behavior of low-temperature current-voltage (I-V) characteristics of Ti-silicided Schottky diodes. Physical parameters such as barrier height, ideality factor, series resistance, and effective Richardson constant of silicided Schottky diodes are extracted from the forward experimental I-V characteristics. Simulations of both the forward and reverse I-V characteristics have also been performed using extracted parameters. Results are compared with the models, such as, thermionic-emission-diffusion and thermionic-emission with barrier lowering reported in the literature. It is shown that for Ti-silicided Schottky diodes, the use of QM transport model provides a better agreement with the experimental data.

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