Abstract-In this work, a generalized procedure is carried out for the design of a microwave amplifier. First of all, the Performance Data Sheets (PDS) resulted from the active device characterization are used as Feasible Design Target Space (FDTS). Employing the PDS, the compatible (Noise F , Input VSWR V i , Gain G T ) is determined over the predetermined bandwidth B between f min and f max operation frequencies with the source Z S and load Z L terminations as the design target. In the design stage, the Simplified Real Frequency Technique (SRFT) is utilized in the scattering-parameter formulation of the front-and back-end matching two-ports to provide the source and load terminations to the transistor, respectively. As an application example, a novel high technology transistor is chosen and the design targets are determined using the PDSs of the device and its frontand back-end matching two-ports are characterized by the scatteringparameters using the novel SRFT for each design target. Furthermore, the performances of the resulted amplifier circuits are analyzed and compared with the simulated results.

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