A Generalized Design Procedure for a Microwave Amplifier: A Typical Application Example

Abstract

Abstract-In this work, a generalized procedure is carried out for the design of a microwave amplifier. First of all, the Performance Data Sheets (PDS) resulted from the active device characterization are used as Feasible Design Target Space (FDTS). Employing the PDS, the compatible (Noise F , Input VSWR V i , Gain G T ) is determined over the predetermined bandwidth B between f min and f max operation frequencies with the source Z S and load Z L terminations as the design target. In the design stage, the Simplified Real Frequency Technique (SRFT) is utilized in the scattering-parameter formulation of the front-and back-end matching two-ports to provide the source and load terminations to the transistor, respectively. As an application example, a novel high technology transistor is chosen and the design targets are determined using the PDSs of the device and its frontand back-end matching two-ports are characterized by the scatteringparameters using the novel SRFT for each design target. Furthermore, the performances of the resulted amplifier circuits are analyzed and compared with the simulated results.

A D-Band Power Amplifier With 30-GHZ Bandwidth and 4.5-DBM Psat for High-Speed Communication System

“…So it is suitable for using as signal trace and matching network. In order to achieve enough power gain and maximum output power at same time, the different matching strategies are used in input and output matching network design [28][29][30]. The conjugate matching method is adopted in input matching network design to achieve the maximum power gain, while the power matching method is adopted in output matching network design to obtain the maximum output power.…”

Performance characterisation of a microwave transistor for the maximum output power and the required noise

“…Then, this pioneer work has been accompanied by a bias-frequency dependent signal-noise either artificial neural network (ANN) or support vector regression machine (SVRM) model of the transistor given in [14,15] and the compatible {F req ≥ F min , V inreq ≥ 1, G T ≤ G Tmax } triplets and their {Z S , Z L } terminations are obtained as the function of the device bias condition (V DS , I DS ) and frequency ( f ). This combined work has been employed firstly to determine the gain-bandwidth limitations of a microwave transistor as a function of operation parameters of (V DS , I DS ), f and the noise F req ≥ F min and input VSWR V inreq ≥ 1i n [ 16], and then to design the low-noise, high-gain and low-input VSWR, wide-band single-transistor amplifiers with the numerous optimisation algorithms as the FDTS in [17][18][19][20][21][22].…”