A D-Band Power Amplifier With 30-GHZ Bandwidth and 4.5-DBM Psat for High-Speed Communication System

Zhang, Bo; Xiong, Yong Zhong; Wang, Lei; Hu, Sanming; Lim, Teck-Guan; Zhang, Yiqi; Li, and Joshua Le-Wei

doi:10.2528/pier10060806

Cited by 24 publications

(16 citation statements)

References 30 publications

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“…However, PAs are inherently nonlinear components, especially when operating close to saturation for power efficiency considerations [1][2][3][4][5], which induces in-band and out-of-band distortions and thus degrades the communication performance. Behavioral modeling is crucial to predict the nonlinearity of PAs in system analysis and estimation, and it is also a key step in constructing a suitable linearizer for the communication system.…”

Section: Introductionmentioning

confidence: 99%

Behavioral Modeling of Rf Power Amplifiers With Memory Effects Using Orthonormal Hermite Polynomial Basis Neural Network

Yuan¹,

Feng²

2013

PIER C

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Abstract-Behavioral modeling technique provides an efficient and convenient way to analyze and predict the performance of the RF power amplifiers (PAs) in system-level, and thus helps to construct a suitable predistorter to linearize the PA system. To accurately describe the nonlinear dynamic characteristics of PAs, an orthonormal Hermite polynomial basis neural network (OHPBNN) is utilized to represent the PA behavioral model, which outperforms, mainly in respect of modeling accuracy, the classic feedforward neural network using sigmoid activation functions.In addition, we apply an adaptive algorithm to determine the appropriate memory depth of PA behavioral model. Simulation results show that the proposed model provides more accurate prediction of the PAs output signal compared with classic neural network models.

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Section: Introductionmentioning

confidence: 99%

Behavioral Modeling of Rf Power Amplifiers With Memory Effects Using Orthonormal Hermite Polynomial Basis Neural Network

Yuan¹,

Feng²

2013

PIER C

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“…The impedance matching circuits are shown in Fig. 7(a), and the final circuit is made on the substrate of ROGERS 4350 [16,17].…”

Section: Power Amplifier Circuit Designmentioning

confidence: 99%

LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT

Sang¹,

Xu²,

Guo³

et al. 2011

PIER Letters

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Abstract-In this paper, a large signal equivalent circuit empirical model based on Anglov model for ceramic package high power AlGaN/GaN HEMT has been proposed. A temperature-dependent drain current model, including self-heating effect, has been presented, and good agreements are achieved between measurement results and calculated results at different temperatures. The nonlinear capacitance models are modeled directly by measured microwave scattering (S) parameters and multi-bias small signal equivalent circuit model (SSECM) of package device is also established based on the measurements. A power amplifier based on large size AlGaN/GaN HEMT with a total gate periphery of 36 mm has been designed by using the proposed model for validation purpose, and the simulation results fit the measurement results well at different temperatures.

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“…With the development of numerical data communications, the demand of high speed and wide-band circuit increases rapidly [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…There are many techniques used to match loads to sources, such as the use of single stub, multi-stubs, uniform transmission line, sections of quarter-wave uniform transmission lines, tapered transmission line, or nonuniform and arbitrary nonuniform transmission line for matching impedance in narrow or wide band frequency [1][2][3][4][5][6]. These techniques are usually used in the frequency domain and in non coupling context, just for single load as in [5,7]. This is no longer the case today where the trend is towards integration of circuits and the context in which the coupling between the circuits can no longer be ignored.…”

Section: Introductionmentioning

confidence: 99%

Wideband Impedance Matching in Transient Regime of Active Circuit Using Lossy Nonuniform Multiconductor Transmission Lines

Amharech¹,

Kabbaj²

2012

PIER C

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Abstract-This paper focuses on the electromagnetic compatibility domain, coupling in microwave circuits and wideband (WB) impedance matching in time domain using a purely temporal method, such as the centered-points Finite Difference Time Domain (FDTD). The paper here presents a new approach of WB impedance matching in transient regime and coupling context, of active circuits such as multiple complex nonlinear components (represented here by metal semiconductor fieldeffect transistors (MESFETs)), using Nonuniform Multiconductor Transmission Lines (NMTL) with frequency dependent losses and FDTD as modeling method. The FDTD method has several positive aspects such as the ease to introduce nonlinear components in the algorithm, the ease to use NMTL and the gain in simulation time and memory space. Also the FDTD method allows the study of WB impedance matching in time domain without recourse to the frequency domain. Systematic comparisons of the results of this method with those obtained by PSpice are done to validate this study. These comparisons show a good agreement between the method presented here and PSpice. The technique presented in this paper shows higher efficiency and ease to implement when compared to PSpice in regard to the treatment of frequency dependent losses, or shapes of transmission lines.

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A D-Band Power Amplifier With 30-GHZ Bandwidth and 4.5-DBM Psat for High-Speed Communication System

Cited by 24 publications

References 30 publications

Behavioral Modeling of Rf Power Amplifiers With Memory Effects Using Orthonormal Hermite Polynomial Basis Neural Network

Behavioral Modeling of Rf Power Amplifiers With Memory Effects Using Orthonormal Hermite Polynomial Basis Neural Network

LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT

Wideband Impedance Matching in Transient Regime of Active Circuit Using Lossy Nonuniform Multiconductor Transmission Lines

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