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Structural, electrical, and photovoltaic properties of single impurity doped polycrystalline silicon were investigated in order to forecast the behavior of more complicated impurity matrixes, like those deriving from upgrading MG silicon. To this purpose, silicon was doped with increasing amounts of titanium, vanadium, chromium, iron, and zirconium, and the diffusion length of minority carriers was measured as a function of the impurity concentration and microstructural features like grain boundaries (GB), dislocations, twins, and stacking faults. Results are displayed in three-dimensional diagrams which permit observations on the dependence of LD simultaneously with the impurity concentration and with the total density of electrically active structural defects. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 131.111.164.128 Downloaded on 2015-08-19 to IP 2364 J. Electrochem. Soc.: SOLID-STATE SCIENCE AND TECHNOLOGY November 198690% of the charge is already solidified and cutting the ingot parallel to the vertical axis of the furnace in order to determine the shape of the solidification interface.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 131.111.164.128 Downloaded on 2015-08-19 to IP Vol. 133, No. 11 SOLAR GRADE SILICON 2365 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 131.111.164.128 Downloaded on 2015-08-19 to IP