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A detailed analysis of the near-infrared luminescence has been performed in undoped and n-doped (Si, Te, Sn) AlGaAs samples grown by MBE and MOVPE techniques. A wide range of AI compositions (2674 %) and donor concentrations (10'8-10'8cm-3) was examined. In the spectral region from 0.9 to 2.0pm in all samples there is a photoluminescence (PL) peak at 1.1 pm (mi). MOVPE samples show an additional PL peak at 1.5 pm (IRZ). which is independent of the AI mole fraction, the doping concentration and the donor species IRZ is not present in MBE-grown samples, where a third peak I R ~ appears. None of the IR peaks is related to DX deep donor centres, since the amplitudes of all IR peaks are independent of the donor doping level. By optically detected ESR of Sidoped samples it was shown that the IRZ band is due to arsenic antisite defects and not to DX centres as previously assumed. Also, deep level transient spectroscopy measurements were performed on Si-doped samples

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