Large-area, vertically aligned silicon nanowire ͑SiNW͒ arrays have been successfully synthesized in an aqueous solution containing AgNO 3 and HF on ͑001͒Si substrates. The as-synthesized SiNWs were determined to be perfectly single crystalline with the axis of the wire parallel to the ͓001͔ direction. The typical widths of the SiNWs were in the range of 30-200 nm. The lengths of SiNWs could be tuned from several to tens of micrometers by adjusting the synthesis temperature and time. We measured the formation rate at different reaction temperatures. The activation energy for linear growth of the SiNWs, as obtained from an Arrhenius plot, was found to be about 0.36 eV. In addition, the Si substrates with highly oriented SiNW arrays were found to exhibit significant hydrophobic properties. The water contact angles of the HF-treated SiNW arrays were measured to be about 120-148°, much greater than that with a flat silicon wafer surface ͑ϳ85 to 88°͒.

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In this study, we report the successful synthesis of large-scale, well-aligned pure cobalt metal nanowire arrays by using the electrodeposition in conjunction with anodic aluminum oxide (AAO) templates technique, and the investigation of the interfacial reactions between the produced Co metal nanowires and (001)Si substrate after different heat treatments. The morphologies, crystal structures, and compositions of the as-synthesized Co nanowires and the Co silicide nanostructures obtained after annealing at various temperatures were systematically investigated by SEM, TEM, and electron diffraction analyses.

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