Diffusion of boron in pure N2, pure NH~, and mixtures of NH~ and N~ has been investigated to study the effect of the oxynitridation reaction on the diffusivity. The oxynitridation-enhanced diffusion can be explained by a dual mechanism involving both vacancy and interstitial silicon atoms. There is no effect on the enhancement diffusivity due to the junction depths used here. The interstitial and probably the vacancy concentrations are flat. With a thin SiQ layer on the silicon wafer and a low boron concentration, the diffusion coefficient can be expressed as a function of the partial pressure of NH3 and temperature as D = 0.105 exp [-3.22 eV/kT] + 1.0 x 10 -6 exp [-1.71 eV/kT]pN~3 cm 2 s i

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