Diffusion of boron in pure N2, pure NH~, and mixtures of NH~ and N~ has been investigated to study the effect of the oxynitridation reaction on the diffusivity. The oxynitridation-enhanced diffusion can be explained by a dual mechanism involving both vacancy and interstitial silicon atoms. There is no effect on the enhancement diffusivity due to the junction depths used here. The interstitial and probably the vacancy concentrations are flat. With a thin SiQ layer on the silicon wafer and a low boron concentration, the diffusion coefficient can be expressed as a function of the partial pressure of NH3 and temperature as D = 0.105 exp [-3.22 eV/kT] + 1.0 x 10 -6 exp [-1.71 eV/kT]pN~3 cm 2 s i

2051various additional curing temperatures. This process was found to reproducib]y remove polyimide effectively without leaving any residual polyimide film on the interface. No electrical degradation was found in the die as a result of this decapsulation process. It offers a useful deprocessing tool for failure analysts. Further work is needed to understand the residual film observed after RIE. ABSTRACTDiffusion of phosphorus in silicon in an ambient of pure N2, pure NHs, and mixtures of NH5 and N2 has been investigated to study the effect of the oxynitridation reaction on the diffusivity. With a thin SiO2 layer on the silicon wafer and a low phosphorus concentration, the diffusion coefficient of phosphorus can be expressed as a function of the partial pressure of NH~ and temperature as D = 0.145 exp (-3.26 eV/kT) + 1.718 • 10 ~ exp (-1.72 eV/kT)pNH3 cm 2 s -1 At the same time, the ratio of the interstitial concentration under oxynitridation conditions to the concentration under inert conditions can be expressed as CI 1 + 1.183 • 10 -5 exp (1.54 eV/kT)pNH3Ci, -By using P diffusion as an interstitial monitor, the data (Ref. 1) of oxynitridation-enhanced B diffusion are analyzed and the fraction of boron diffusion which occurs through the interstitial mechanism is calculated to be 0.88.

The purpose of this study was to evaluate the differential associations among various myelin-related indices in white matter (WM) and grey matter (GM) to comprehend the alteration of microstructural integrity in brain tissue. We calculated mean, coefficient of variance (CV), and peak probability of ADC, apparent myelin water fraction (aMWF), and T1w/T2w ratio and found differential associations among myelin-related indices in GM and WM. In conclusion, measurements of ADC, aMWF, and T1w/T2w ratio as well as their correlations can help to understand characteristics of microstructural tissue integrity in GM and WM.