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InAIGaAs in combination with InP, InGaAs, and InAIAs is an attractive material for long wavelength applications. Reactive ion etching of InP/lnAIGaAs/lnGaAs heterostructures using CH 4 /H2Ar plasma is systematically investigated and optimization is obtained. The etching process is investigated as a function of radio-frequency power density and total pressure and its results are characterized in terms of etch rate, surface-roughness, and etch profile. Etch conditions for the smooth and reproducable etching of Al-containing heterostructures are reported. The quality of the results achieved is reflected by excellent quality epitaxial InP overgrowth.

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Reactive Ion Etching (RIE) of InP/InAlGaAs/InGaAs Heterostructures.-The title process in a CH4/H2/Ar plasma is studied in terms of etch rate, surface roughness, and profile of rectangular waveguides as a function of r.f. power density and total pressure. Optimal results are observed for a power density of 0.33 W/cm2 and a total pressure of 1 Pa. These etching parameters lead to smooth surfaces, etch rates which are closer to each other, and sidewalls of waveguide stripes with rectangular profile for InP and InGaAs and ≈70 • for InAlGaAs. -(LEMM, CH.; KOLLAKOWSKI, ST.; BIMBERG, D.; JANIAK, K.; J. Electrochem. Soc. 144 (1997) 9, L255-L257;