Articles you may be interested inInGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights Two-dimensional device modeling and analysis of GaInAs metal-semiconductor-metal photodiode structures High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes Picosecond dynamic response of nanoscale low-temperature grown GaAs metal-semiconductor-metal photodetectors Appl.We report on passivation and antireflection coating of InP/InGaAs metal-semiconductor-metal photodetectors by low-temperature deposited silicon dioxide. The passivating performance of silicon dioxide films applied by nonreactive radio frequency magnetron sputtering and remote plasma enhanced chemical vapor deposition are comparatively investigated. Different wet chemical treatments of the InP surface prior to deposition including sulfur passivation are performed and their influences on the device performance are presented. Under optimized deposition conditions and pretreatments, both processes result in a stable and reproducible surface passivation as reflected by a drastic reduction of excessive leakage currents and photocurrent gain. The improvement of the device characteristics due to the silicon dioxide coating is attributed to a substantial lowering of the density of interface states at the insulator-InP interface as compared to nonpassivated devices.
We report on sulfur based surface passivation technique for InGaAs metal-semiconductor-metal (MSM) photodetectors with an InP barrier enhancement layer. We show that excessive leakage current and photocurrent gain, which are the two major performance-limiting factors in MSM detectors, can be largely suppressed by a treatment of the InP surface with ammonium polysulfide. The dark current and photocurrent characteristics of such passivated devices were monitored over a period of half a year and were found to be stable. The improved performance of the device characteristics is explained in terms of a passivation-induced reduction of surface charging effects.
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