High speed, high efficiency resonant-cavity enhancedInGaAs MSM photodetectors

Strittmatter, A.; Kollakowski, St.; Dröge, E.; Böttcher, E.H.; Bimberg, D.

doi:10.1049/el:19960810

Cited by 13 publications

(6 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The novel photodetectors (PDs) for advanced Gigabit-speed fiber optic communication and fiber optics in RF/microwave systems are required to have fast speed, large responsivity, high signal-to-noise ratio, and wavelength selectivity. Resonant cavity enhanced devices offer the possibility of meeting some of these demands [4,5]. The presence of a resonant cavity creates wavelength selectivity accompanied by a drastic increase of the optical field at the resonant wavelength while the electrical properties of the photodetector remain primarily unchanged.…”

Section: Introductionmentioning

confidence: 99%

High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors

et al. 2005

View full text Add to dashboard Cite

In this work we review the properties of a class of metal−semiconductormetal photodetectors based on heterojunction structures. Particularly, an AlGaAs/GaAs device is detailed in which the absorption region is in the GaAs layer, and a two-dimensional electron gas is formed at the heterointerface due to δ-doping of the widegap material. This heterostructure metalsemiconductor-metal photodetector also contains an AlGaAs distributed Bragg reflector that forms a resonant cavity for detection at 850 nm. The beneficial effect of the two-dimensional electron gas in the GaAs absorption layer in terms of speed and sensitivity is demonstrated by comparing samples with and without doping in the AlGaAs layer. The design and the physical properties of the grown epitaxial structure are presented, together with the static and dynamic characteristics of the device in time domain. In particular, photocurrent spectra exhibit a 30 nm wide peak at 850 nm, and time response measurements give a bandwidth over 30 GHz. A combination of very low dark current and capacitance, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes this device suitable for a number of application areas, such as Gigabit and 10 Gigabit Ethernet, wavelength division multiplexing, remote sensing, and medical applications.

show abstract

Section: Introductionmentioning

confidence: 99%

High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors

et al. 2005

View full text Add to dashboard Cite

show abstract

“…8,9 On the other hand, RCE MSM photodetectors have been studied in order to increase the quantum efficiency with large finger spacing (> 1 µm). [10][11][12] In both cases, the bandwidth-efficiency product is limited by the opacity of the metallic electrodes. Among other photodetector designs, laterally illuminated waveguide and traveling-wave photodetectors 13,14 are other solutions for ultrafast devices.…”

Section: Introductionmentioning

confidence: 99%

Light confinement and absorption in metal-semiconductor-metal nanostructures

et al. 2005

View full text Add to dashboard Cite

New concepts for efficient light absorption in nanoscale metal-semiconductor-metal photodetectors are analyzed from both theoretical and experimental point of view. They are based on sub-wavelength metallic gratings which allows light confinement in tiny volumes (< 100 nm) close to electrodes (< 100 nm). Two photodetector structures are proposed: (i) a resonant-cavity-enhanced subwavelength metal-semiconductor-metal photodetector, and (ii) a nanoscale metal-semiconductor grating photodetector. External quantum efficiency as high as 9 % has been obtained in 40 × 100 nm 2 cross-section GaAs wires, limited by fabrication technology. These results show promising features for highly efficient and ultrafast photodetectors.

show abstract

“…Therefore, by using RCE-PD with a thin active layer, high-efficiency values can be achieved without lowering the detector bandwidth [13], [14]. Using the RCE structure, InGaAs-based MSM PDs with 77% QE and 10-GHz bandwidth at 1.3-m wavelength [15], Schotttky PDs with 55% QE and 22.5-GHz bandwidth [16], p-i-n [17], and avalanche PDs with 70% QE and 24 GHz at unity gain [18] have been reported by other researchers. In this letter, we demonstrate a 1.55-m InGaAs-based high-performance and high output current RCE PD with a resonant wavelength tunable in 50-nm range.…”

Section: Introductionmentioning

confidence: 99%

InGaAs-based high-performance p-i-n photodiodes

Kimukin

Bıyıklı

Bütün

et al. 2002

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

In this letter, we have designed, fabricated, and characterized high-speed and high-efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible process. By using a postprocess recess etch, we tuned the resonance wavelength from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6-mW optical power, where we obtained 5-mA photocurrent at 3-V reverse bias. The photodetector had a temporal response of 16 ps at 7-V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz

show abstract

High speed, high efficiency resonant-cavity enhancedInGaAs MSM photodetectors

Cited by 13 publications

References 5 publications

High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors

High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors

Light confinement and absorption in metal-semiconductor-metal nanostructures

InGaAs-based high-performance p-i-n photodiodes

Contact Info

Product

Resources

About