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Articles you may be interested inAtomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices J. Appl. Phys. 109, 064101 (2011); 10.1063/1.3553872Pulse response of thin III/V semiconductor photocathodes A simple procedure for the rapid formation of uniform native oxides on various III-V semiconductor materials is described. A puIsed applied potential drives an anodic oxide formation process on the semiconductor immersed in a glycol:water:acid solution. Uniform oxides up to 2000 A thick can be grown in a few minutes at room temperature and used to define areas for current injection into the semiconductor. AlGaAs diode lasers fabricated with 50-pm-wide current stripes defined by pulsed anodic oxide had threshold current densities substantially lower than lasers fabricated with 50-,um-wide stripes defined by chemical-vapor-deposited SiO,.

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