1W CW, 672 nm visible laser diodes

Serreze, H. B.; Harding, C. M.; Waters, R. G.

doi:10.1049/el:19911389

“…Extrapolation to the infinite cavity length yielded J th = J ∞ = 150 A cm −2 . The obtained J th are still slightly larger than the values obtained for the visible emitters by other growth methods, as J th values around 300 A cm −2 are obtained for MOCVD-grown devices emitting near 680 nm [1,15]. However, the present values are among the best ones reported for SSMBE-grown material [8], and further reduction in J th is still to be expected.…”

Section: Resultscontrasting

confidence: 65%

High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy

Toivonen

¹

,

Savolainen

²

,

Pessa

³

1996

Semicond. Sci. Technol.

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High-performance visible (λ ≈ 680 nm) Ga x In 1−x P/(Al y Ga 1−y ) 0.51 In 0.49 P compressively strained single quantum well laser diodes have been grown by solid source molecular beam epitaxy. The waveguide region was designed to have a low Al content in order to enhance the optical field confinement and to improve the material quality. The threshold current density for an infinity long cavity length was estimated to be 150 A cm −2 . The highest external quantum efficiency of 37% per facet was obtained for a cavity length of 480 µm. A characteristic temperature of 130 K was measured in the temperature interval from 20 • C to 50 • C.

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“…Extrapolation to the infinite cavity length yielded J th = J ∞ = 150 A cm −2 . The obtained J th are still slightly larger than the values obtained for the visible emitters by other growth methods, as J th values around 300 A cm −2 are obtained for MOCVD-grown devices emitting near 680 nm [1,15]. However, the present values are among the best ones reported for SSMBE-grown material [8], and further reduction in J th is still to be expected.…”

Section: Methodscontrasting

confidence: 53%

“…The highest η D ≈ 37% per facet was attained for lasers with a 480 µm long cavity. Typically, η D of a singleelement red laser at 680 nm is more modest, around 30% per uncoated facet [15]. A decrease of less than 10% in η D was observed for a 1020 µm cavity length, when temperature was increased from 10 • C to 70 • C. In addition, the characteristic temperature (T 0 ) was rather high.…”

Section: Resultsmentioning

confidence: 99%

Generation of Monopole Ultrasonic Pulse from a Circular Source and It's On-axis Pressure Characteristics

Takasaki

¹

,

Imano

²

,

Inoue³

1998

Jpn. J. Appl. Phys.

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High-performance visible (λ ≈ 680 nm) Ga x In 1−x P/(Al y Ga 1−y ) 0.51 In 0.49 P compressively strained single quantum well laser diodes have been grown by solid source molecular beam epitaxy. The waveguide region was designed to have a low Al content in order to enhance the optical field confinement and to improve the material quality. The threshold current density for an infinity long cavity length was estimated to be 150 A cm −2 . The highest external quantum efficiency of 37% per facet was obtained for a cavity length of 480 µm. A characteristic temperature of 130 K was measured in the temperature interval from 20 • C to 50 • C.

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