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The changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analyzing the effects of irradiation induced displacement damage on cell performance. The influence of base thickness on radiation resistance has been studied by changing the base thickness of top GaInP and middle GaInAs subcell, respectively. The experimental results show that the electrical parameters, Voc, Isc, and Pmax of UMM cell degrade with the increase of electron fluence. The change of spectra response indicates middle GaInAs subcell degrades more severe than top GaInP subcells, and the base thickness of two subcells has different effects on spectra response of UMM cell.

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