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A new and improved method of growing Al-free GaInP/GaAs quantum wells (QWs) is presented. We found that both interfaces are important for obtaining a high-quality quantum well. With an added H purge and PH pre#ow procedure, we have signi"cantly improved the GaInP on GaAs interface by eliminating the unwanted dark line region at the interface. At the GaAs on GaInP interface, we added a thin GaAsP layer. This layer e!ectively prevents the In memory e!ect at the interface. As a result of this new growth procedure, a linewidth of 6.7 meV (at 20 K) for the quantum well emission was achieved.

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