We fabricated amorphous SrRuO3 thin films which exhibited the electronic transport behavior of an insulator that showed a three-dimensional hopping transport. Depending on the polarity of a sweep bias, bistable resistive states were observed in the capacitor consisted of an amorphous SrRuO3 thin film and Pt electrodes, which gives the opportunity for nonvolatile memory applications. From electric transport and optical conductivity data, we indirectly confirmed a probability of the mixed phase of SrO and RuO2 in the amorphous SrRuO3 thin film. This supports the applicability of a filament model as a mechanism for the bistable resistive states.

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