The targeted 175°C junction temperature limit for the next generation of 1200V IGBT requires safe and reliable operation of the devices at a temperature of 200°C. Due to the exponential scaling of several IGBT parameters, such high temperatures will subject the IGBT to new levels of stress, guiding chip designers and application people onto completely new grounds whose firmness is largely unknown. In this paper, we take some first steps by investigating the operation of 1200V IGBTs at temperatures up to 200°C, looking at their characteristics, trying to understand potentials and possible threats, and drawing initial conclusions how such devices must be dimensioned in order to operate safely.