1200V IGBTs operating at 200°C? An investigation on the potentials and the design constraints

Abstract

The targeted 175°C junction temperature limit for the next generation of 1200V IGBT requires safe and reliable operation of the devices at a temperature of 200°C. Due to the exponential scaling of several IGBT parameters, such high temperatures will subject the IGBT to new levels of stress, guiding chip designers and application people onto completely new grounds whose firmness is largely unknown. In this paper, we take some first steps by investigating the operation of 1200V IGBTs at temperatures up to 200°C, looking at their characteristics, trying to understand potentials and possible threats, and drawing initial conclusions how such devices must be dimensioned in order to operate safely.

A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

“…It is worth to note that the proposed method relies on temperature-dependent indicators which could easily be applied for SCSOA characterization at different temperatures. Furthermore, prior studies have already pointed out a linear dependence of the SCSOA with the initial junction temperature [23], [24]. For this reason, the expected outcome would be a linear shift towards lower SCSOA with increasing temperature.…”

Comparison of thermal runaway limits under different test conditions based on a 4.5kV IGBT

“…High-Voltage IGBTs are nowadays being pushed to operate closer to their SOA (Safe Operation Area) limits at ever increasing temperatures [1,2]. With this new challenge, devices have to demonstrate their switching capability at the maximum ratings and specified junction temperature by proving their stable temperature-dependent performances [3,4].…”

Junction Temperature Measurement of IGBTs Using Short Circuit Current as a Temperature Sensitive Electrical Parameter for Converter Prototype Evaluation

“…In [29], it is mentioned that the IGBT junction temperature during the short circuit period can be estimated based on the temperature dependence of the short circuit current. However, there is no paper introducing how IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS to use the NTC property of short circuit current to measure the IGBT junction temperature during the converter operation.…”