Noise characteristics of emission current from conductive diamond-like carbon thin films coating on cone shaped silicon field emitters Diamond films with various thicknesses ͑0.15-9 m͒ were grown by microwave plasma chemical vapor deposition. The lowest threshold field strength for electron emission was 4 V/m for the ϳ1.5-m-thick diamond film. The results were analyzed by effective emission areas and effective work function according to Fowler-Nordheim theory. It was found that the threshold voltage was strongly affected by the ratio of ͑111͒ and ͑110͒ oriented grains in the films. The larger the fraction of ͑111͒ oriented grains, the lower the effective work function in agreement with the reported negative electron affinity of ͑111͒ surfaces.

Competition of nitrogen doping and graphitization effect for field electron emission from nanocrystalline diamond films J.Field emission from chemical vapor deposited diamond and diamond-like carbon films: Investigations of surface damage and conduction mechanismsThe field emission characteristics of diamond films with different surface morphologies were studied. The diamond films were grown on silicon substrates by chemical vapor deposition technique under different deposition conditions. The nucleation density and surface morphological properties were analyzed by means of scanning electron microscopy and atomic force microscopy. Results from these studies showed that the diamond film with small crystal size and high nucleation densities had better field emission characteristics. In addition, ͑110͒ and ͑111͒ oriented films exhibited better field emission properties than ͑100͒ oriented films.

Ex situ spectroscopic ellipsometry investigation of the layered structure of polycrystalline diamond thin films grown by electron cyclotron resonance-assisted chemical vapor deposition