Influence of the bias voltage Ub and the deposition rate  on the structure, grain size D, and coercivity Hc of NiFe films with the thickness d from 30 to 980 nm, grown onto Si / SiO2 substrates by DC magnetron sputtering, was studied. In the case Ub = 0, the decrease of  from ≈ nm/min to ≈ 7 nm/min is accompanied by the increase of the critical film thickness dcr from dcr ≈ 220 nm to dcr ≈ 270 nm. In this case, Hc in the films with d < dcr is characterized by the dependence Hc ~ D6 and varies from ~ 1 to ~ 20 Oe. In the case of Ub = -100 V, the effect of the deposition rate on the coercivity is much more noticeable. At ν = 7 and 14 nm / min, the films demonstrate soft magnetic properties (Нс ≈ 0.15 - 1.4 Oe) and the absence of dcr for the entire range of studied thicknesses. The films obtained at ν = 21 and 27 nm / min turn into the “supercritical” state at d ≥ dcr ≈ 520 nm, and, in the region d < dcr, they are characterized by the dependence Hc ~ D3 and by the increase of coercivity from ~ 0.35 to ~ 10 Oe.

Spin pumping by traveling magnetostatic surface waves (MSSW) has been experimentally investigated in YIG|Pt structures made on the basis of 0.9, 4, 8, 14 and 18 µm thick YIG epitaxial films. It is found that at frequencies corresponding to the van Hove singularities in the density of states of the MSSW spectrum of the structure, the EMF value generated due to the inverse spin Hall effect increases. This increase is associated with an increase in the spin mixing conductance of the YIG|Pt interface due to an increase in the efficiency of electron-magnon scattering at the frequencies of van Hove singularities in the spin wave spectrum.