Rapid urbanization and economic development have led to the development of heavy industry and structural re-equalization in mainland China. This has resulted in scattered and disorderly layouts becoming prominent in the region. Furthermore, economic development has exacerbated pressures on regional resources and the environment and has threatened sustainable and coordinated development in the region. The NASA Land Science Investigator Processing System (Land-SIPS) Visible Infrared Imaging Radiometer (VIIRS) 375-m active fire product (VNP14IMG) was selected from the Fire Information for Resource Management System (FIRMS) to study the spatiotemporal patterns of heavy industry development. Furthermore, we employed an improved adaptive K-means algorithm to realize the spatial segmentation of long-order VNP14IMG and constructed heat source objects. Lastly, we used a threshold recognition model to identify heavy industry objects from normal heat source objects. Results suggest that the method is an accurate and effective way to monitor heat sources generated from heavy industry. Moreover, some conclusions about heavy industrial heat source distribution in mainland China at different scales were obtained. Those can be beneficial for policy-makers and heavy industry regulation.

Room-temperature observation for reverse intersystem crossing (RISC) from triplet to singlet charge-transfer states (CT 3 → CT 1 ) and clarification of its physical mechanisms are the key requirements for designing highly efficient exciplex-based organic light-emitting diodes (OLEDs). Herein, balanced and unbalanced exciplex-based OLEDs were fabricated by employing different holeinjection layers, and RISC of CT states was directly observed via analyzing magnetoconductance (MC) and magneto-electroluminescence (MEL) traces of the balanced device at room temperature. Specifically, current-dependent MC traces of the balanced device always present B-mediated RISC features, whereas those from the unbalanced one depict the superposition of B-mediated intersystem crossing (ISC) and the dissociation of CT 3 by excessive charge carriers. Simultaneously, MEL curves of the balanced device display the conversion from ISC to RISC with lowering bias current, but those from the unbalanced one always show ISC under all of bias currents. Moreover, although all of current-dependent magneto-efficiency (Mη) traces exhibit ISC, Mη values are ∼2 times lower in the balanced device than the unbalanced one. These rich changes of magnetic-field responses demonstrate that balanced carrier injection can facilitate the occurrence of RISC by reducing the dissociation of CT 3 . Expectedly, the current efficiency of electroluminescence from the balanced device is increased by ∼2.2 times, which originates from the improvement of delayed luminescence because of the enhanced RISC. Accordingly, this work not only clarifies the prerequisite for observing RISC of CT states but also provides strategies for designing high-efficiency exciplex-based OLEDs.

A high‐level reverse intersystem crossing (HL‐RISC, T2 → S1 → S0 + hν) process has recently been discovered as a promising route for achieving highly efficient organic light‐emitting diodes (OLEDs), but the prerequisites for the occurrence of HL‐RISC in rubrene is still vague and the reported external quantum efficiencies (EQEs) of rubrene‐doped OLEDs are typically limited to several percent. Herein, using the fingerprint magneto‐electroluminescence tools, it is found that the energy confinement of high‐lying triplet states (T2, rub) is of great importance for the achievement of the HL‐RISC process. Namely, when the triplet energies of hosts satisfy the criterion of E(T1, host) ≥ E(T2, rub), the high‐level Dexter energy transfer channel (T1, host → T2, rub) can facilitate the occurrence of HL‐RISC (T2, rub → S1, rub) in rubrene. Most importantly, through selecting an exciplex with a high triplet energy as the co‐host for rubrene dopant so as to simultaneously utilize the HL‐RISC of the dopant and the RISC of the host, a record high EQE up to 16.1% is achieved and no obvious efficiency roll‐off is observed at high luminance due to the absence of triplet‐charge annihilation. Accordingly, this work not only deepens the physical understanding of this amazing HL‐RISC channel, but also provides a new direction for designing a series of highly efficient OLEDs.