20 − 23 ) ZnO thin films grown by pulsed laser deposition on Ce O 2 -buffered r -sapphire substrate Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation J. Appl. Phys. 99, 034105 (2006); 10.1063/1.2169508Room-temperature ferromagnetic Co-doped ZnO nanoneedle array prepared by pulsed laser deposition Highly textured ͑001͒ ZnO films have been deposited on ͑100͒ InP by pulsed laser deposition without substrate degradation. For this, growth starts in high vacuum, 8ϫ10 Ϫ7 mbar, with the substrate heated to 350°C and later the oxygen pressure is increased up to 10 Ϫ1 mbar, at which optimum crystallinity is achieved. Using a KrF laser at a fluence of 4 J/cm 2 , a repetition rate of 10 Hz and a target to substrate distance of 6 cm, the film growth rate is 0.08 Å/pulse. The film bulk has a columnar structure. The typical x-ray diffraction full width at half maximum ͑FWHM͒ is 0.2°-0.24°, while the -rocking curve FWHM is in the 1°-3°range. The surface shows two growth regimes: for thickness below 200 nm a granular film surface is obtained, and above this thickness the film surface exhibits submicron sized hexagonal pyramids. The tops of the pyramids have steps with heights of about 10 Å. The ZnO grains are randomly oriented about the ͓100͔ InP direction. The phase velocity of the acoustic bulk phonons of the ZnO films is about 6100 m/s.

We demonstrate for the first time that input polarisation control inducing one single filamentation is a very robust technique to accurately control the filamentation dynamics enhancing throughput energy of the supercontinuum generation up to 1.2 millijoule. Reaching the above-millijoule regime opens the way to post-compression of multi-terawatt laser pulses.

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