Bi-axially highly-strained Silicon-On-Insulator (sSOI) substrates with a tensile stress up to 2.5 GPa have been obtained by Smart CutTM technology. Thin strained silicon (sSi) layers epitaxially grown on relaxed Si0.6Ge0.4 virtual substrates (VS) were used as starting materials. The threading dislocation density in those sSi layers was in the low 105 cm-2. Some stacking faults were also present in those highly strained Si films. The evolution of this linear defect density was characterized as a function of the sSi thickness by Secco etch. 2.5 GPa sSOI wafers have been demonstrated in 200 mm diameter. Stress uniformity σ equal to 1.14% and 2 nm thickness range has been obtained for 8 nm thick sSi layers.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.