An improved technique for transferring large area graphene grown by chemical vapor deposition on copper is presented. It is based on mechanical separation of the graphene/copper by H 2 bubbles during H 2 O electrolysis, which only takes a few tens of seconds while leaving the copper cathode intact. A semi-rigid plastic frame in combination with thin polymer layer span on graphene gives a convenient way of handling-and avoiding wrinkles and holes in graphene. Optical and electrical characterizations prove the graphene quality is better than that obtained by traditional wet etching transfer. This technique appears to be highly reproducible and cost efficient. V

One current key challenge in graphene research is to tune its charge carrier concentration, i.e., p- and n-type doping of graphene. An attractive approach in this respect is offered by controlled doping via well-ordered self-assembled networks physisorbed on the graphene surface. We report on tunable n-type doping of graphene using self-assembled networks of alkyl-amines that have varying chain lengths. The doping magnitude is modulated by controlling the density of the strong n-type doping amine groups on the surface. As revealed by scanning tunneling and atomic force microscopy, this density is governed by the length of the alkyl chain which acts as a spacer within the self-assembled network. The modulation of the doping magnitude depending on the chain length was demonstrated using Raman spectroscopy and electrical measurements on graphene field effect devices. This supramolecular functionalization approach offers new possibilities for controlling the properties of graphene and other two-dimensional materials at the nanoscale.

Despite the fact that two-dimensional MoS films continue to be of interest for novel device concepts and beyond silicon technologies, there is still a lack of understanding on the carrier injection at metal/MoS interface and effective mitigation of the contact resistance. In this work, we develop a semi-classical model to identify the main mechanisms and trajectories for carrier injection at MoS contacts. The proposed model successfully captures the experimentally observed contact behavior and the overall electrical behavior of MoS field effect transistors. Using this model, we evaluate the injection trajectories for different MoS thicknesses and bias conditions. We find for multilayer (>2) MoS, the contribution of injection at the contact edge and injection under the contact increase with lateral and perpendicular fields, respectively. Furthermore, we identify that the carriers are predominantly injected at the edge of the contact metal for monolayer and bilayer MoS. Following these insights, we have found that the transmission line model could significantly overestimate the transfer length and hence the contact resistivity for monolayer and bilayer MoS. Finally, we evaluate different contact strategies to improve the contact resistance considering the limiting injection trajectory.