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We present cross-sectional scanning tunneling microscopy results of self-organized In0.8Ga0.2As quantum dots covered by an In0.1Ga0.9As film inside a GaAs matrix prepared by metalorganic chemical vapor deposition. From images of quantum dots with atomic resolution, we determine a spatial distribution of the In composition within the dots with a shape of a reversed truncated cone. The wetting layer and the overgrown In0.1Ga0.9As layer show vertical intermixing.

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N‐type doping of GaN in hydride vapour phase epitaxy (HVPE) has been studied. While silane was found to be not suitable, doping from solid silicon was found to be feasible but difficult to handle. Dichlorosilane was found to be a convenient Si doping source for HVPE growth of GaN. High electron mobilities as well as good optical and structural properties are obtained in the doping range of 6 × 1017 cm–3 to 8 × 1018 cm–3 using dichlorosilane. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)