Silicon carbide (SiC) films have been grown on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition, using propane, silane, and hydrogen. X-ray photoelectron spectroscopy data confirm that the films are stoichiometric SiC, with no major impurities. X-ray diffraction and transmission electron microscopy (TEM) data indicate that the films are single-crystalline cubic polytype (3C) across the 4 in. substrates. With the exception of slip lines near the edge of the wafers, the films appear featureless when observed optically. The nitrogen concentration, as determined by secondary ion mass spectroscopy, is 4×1018 cm3. Cross-sectional TEM images show a fairly rough, void-free interface.
Generally, GaN-based devices are grown on silicon carbide or sapphire substrates. But these substrates are costly and insulating in nature and also are not available in large diameter. Silicon can meet the requirements for a low cost and conducting substrate and will enable integration of optoelectronic or high power electronic devices with Si based electronics. But the main problem that hinders the rapid development of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the first MBE grown GaN based LED on Si was made and now the quality of material grown on silicon is comparable to that on sapphire substrate. It is only a question of time before Si based GaN devices appear on the market. This article is a review of the latest developments in GaN based devices on silicon.
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