2D layered materials with sensitive surfaces are promising materials for use in chemical sensing devices, owing to their extremely large surface-to-volume ratios. However, most chemical sensors based on 2D materials are used in the form of laterally defined active channels, in which the active area is limited to the actual device dimensions. Therefore, a novel approach for fabricating self-formed active-channel devices is proposed based on 2D semiconductor materials with very large surface areas, and their potential gas sensing ability is examined. First, the vertical growth phenomenon of SnS nanocrystals is investigated with large surface area via metal-assisted growth using prepatterned metal electrodes, and then self-formed active-channel devices are suggested without additional pattering through the selective synthesis of SnS nanosheets on prepatterned metal electrodes. The self-formed active-channel device exhibits extremely high response values (>2000% at 10 ppm) for NO along with excellent NO selectivity. Moreover, the NO gas response of the gas sensing device with vertically self-formed SnS nanosheets is more than two orders of magnitude higher than that of a similar exfoliated SnS -based device. These results indicate that the facile device fabrication method would be applicable to various systems in which surface area plays an important role.

TaS2 is a transition metal dichalcogenide material with a layered two-dimensional crystal structure and physically interesting behavior. 1T-TaS2 in particular exhibits a complex interaction between electron–electron and electron–lattice, as well as unique two-dimensional charge density wave characteristics with varying phase transitions depending on the temperature range. However, few reports exist on the synthesis of TaS2 crystals, and a relatively long time is required for the synthesis of TaS2 nanostructures. Here, we present an efficient method for 1T-TaS2 synthesis by chemical vapor deposition using iodine as a transport agent. We successfully synthesized 1T-TaS2 nanocrystals or thin films in a short processing time of a few hours, and their structural and chemical properties were characterized.