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The photocurrent and responsivity characteristics of amorphous InZnO (a-IZO) thin film transistors (TFTs) under different Ar:O2 gas flow ratio when growing the IZO active layer by sputtering are investigated. As the Ar:O2 gas flow ratio increases, the photocurrent and responsivity increase by nearly two orders of magnitude, under the same light power density at a wavelength of 400 nm to 475 nm light illumination.

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In this paper, we investigated high‐voltage characteristics of topgate amorphous InGaZnO thin‐film transistors. Results indicate that the saturation current decreases at high drain bias. Moreover, the threshold voltage (Vth) positive shift after device biased at the high drain voltage and the shift magnitude become larger at shorter channel length devices. These observations are attributed to the fact that hot electrons were produced due to the strong drain to source electric field and trapped in the gate insulator. The device performance was recovered after 1000‐s negative gate bias at 60 °C.