Bulk acoustic wave (BAW) filters have been extensively used in consumer products for mobile communication systems due to their high performance and standard complementary metal-oxide-semiconductor (CMOS) compatible integration process. However, it is challenging for a traditional aluminum nitride (AlN)-based BAW filter to meet several allocated 5G bands with more than a 5% fractional bandwidth via an acoustic-only approach. In this work, we propose an Al0.8Sc0.2N-based film bulk acoustic wave resonator (FBAR) for the design of radio frequency (RF) filters. By taking advantage of a high-quality Al0.8Sc0.2N thin film, the fabricated resonators demonstrate a large Keff2 of 14.5% and an excellent figure of merit (FOM) up to 62. The temperature coefficient of frequency (TCF) of the proposed resonator is measured to be −19.2 ppm/°C, indicating excellent temperature stability. The fabricated filter has a center frequency of 4.24 GHz, a −3 dB bandwidth of 215 MHz, a small insertion loss (IL) of 1.881 dB, and a rejection >32 dB. This work paves the way for the realization of wideband acoustic filters operating in the 5G band.

Wide bandgap two-dimensional semiconductors are of paramount importance for developing van der Waals heterostructure electronics. This work reports the use of layer and strain engineering to introduce the feasibility of two-dimensional hexagonal (h)-AlN to fill the scientific and application gap. We show that such one- to five-layer h-AlN has an indirect bandgap, tunable from 2.9 eV for a monolayer to ∼3.5 eV for multilayer structures, along with isotropic effective masses and carrier mobilities between zigzag and armchair directions. With an increase in the layer number to bulk AlN, the bandgap will experience a transition from an indirect gap to direct gap. Surprisingly, high room-temperature mobilities of electrons and holes (of the order of 1000 cm2 V−1 s−1) in a relaxed monolayer h-AlN system and widely adjustable effective masses and carrier mobilities in a different layer h-AlN are observed. In the presence of strain engineering, the bandgap decreases obviously with an increase in tensile strain; meanwhile, the isotropy and value of effective mass or carrier mobility in monolayer h-AlN can also be modulated effectively; the hole mobilities in the armchair direction, especially, will be enhanced dramatically. With a tunable bandgap, high carrier mobilities, and modifiable isotropy, our results indicate that few-layer h-AlN has potential applications in future mechano-electronic devices.

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Solar collectors are very important to the photothermal utilization of solar energy in low-temperature conditions. In this paper, a solar collector comprising an oscillating heat pipe in a flat-plate structure is designed and studied experimentally. The thermal properties are studied in detail, and we finally obtain the startup temperature and the expression of the instantaneous efficiency with a relative error of 5%. The results show that the impact of inclination angles on the startup properties of the solar collector is significant to the thermal properties. The comparisons of the efficiency of the present design and similar products are also displayed and discussed, showing that an oscillating heat pipe collector in a flat-plate structure overcomes the low efficiency, high startup temperature and bad pressure resistance of conventional solar collectors. In addition, the thermal properties of the water heating system based on the novel collector were also tested, illustrating the differences between the solar irradiance and the water heating system. Some improvements (e.g., shell material and assembly method) were made in this system design process to increase the heat transfer efficiency and solve the corrosion and pressure resistance problems.

As radio-frequency (RF) communication becomes more ubiquitous globally, film bulk acoustic resonators (FBAR) have attracted great attention for their superior performance. One of the key parameters of an FBAR, the effective electromechanical coupling coefficient (Keff2), has a great influence on the bandwidth of RF filters. In this work, we propose a feasible method to tune the Keff2 of the FBAR by etching the piezoelectric material to form a trench around the active area of the FBAR. The influence of the position of the etching trench on the Keff2 of the FBAR was investigated by 3D finite element modeling and experimental fabricating. Meanwhile, a theoretical electrical model was presented to test and verify the simulated and measured results. The Keff2 of the FBAR tended to be reduced when the distance between the edge of the top electrode and the edge of the trench was increased, but the Q value of the FBAR was not degraded. This work provides a new possibility for tuning the Keff2 of resonators to meet the requirements of different filter bandwidths.