Electrodeposition of copper into sub-0.25 m features has been studied theoretically and experimentally. A physically based twodimensional (2D) pseudo-steady state and a one-dimensional (1D) unsteady-state mass-transfer model have been developed to study the effect of important parameters on the step coverage, evolution of copper deposits in damascene features, and deposition rate inside high aspect ratio single and dual damascene features. An analytical model that assumes linear deposition kinetics and a fixed boundary also has been developed and found to be in good agreement with the numerical results of the free boundary models to about 50% filling of the feature. A new criterion, based on the pulse plating parameters, for optimizing the opposing trends in step coverage and the deposition rate is also given. Copper has been deposited into submicron features, by dc and pulse plating, using an alkaline bath. Deposit evolution inside trenches has been studied by performing sequential plating experiments. Copper deposits with good morphology and resistivity were obtained using the alkaline bath. Experimental observations have been compared to the model trends and found to be in good agreement. Pulse plating experiments show that the deposit quality and the step coverage are improved over dc plating. Slanting the sidewalls also improves step coverage as shown by 2D model calculations.

The Phase I materials development effort was highly productive with the proposed Phase I milestones accomplished or exceeded. The results of Phase I have successfully demonstrated that an air-stable, high mobility n-type organic material can be synthesized and integrated into a process to form an organic CMOS process. Phase I has further demonstrated effective solutions to the challenges that are generally associated with such integration, including the development of an appropriate dielectric and electrode which are compatible with p-type materials as well. Major accomplishments were: 1. N-Type molecular semiconductors "* Synthesized carbonyl-containing oligothiophenes "* Fully characterized new compounds, films "* TFT fabrication, evaluation, ji-2 cm 2 /Vs (a record) and Ion:Ioff-109 2. Solution-processable n-type semiconductors "• Synthesized new polythiophenes "• Fully characterized new materials "* TFT fabrication, evaluation "* Solution-processed n-type films fabricated, characterized "* TFT fabrication, evaluation, jt-0.06 cm 2 /Vs (a record) and Ion:loff-10 5 3. Gate dielectrics "• New nanoscopic dielectric materials "• Low leakage currents (< 10-8 A/cm 2), high breakdown fields (> 5 MV/cm), large gate capacitance-up to 2500 nF/cm2 ; k = 16 ((a record). "* Enabled organic CMOS technology at low voltages (< 2 V)