About 100 fragments of Roman mosaic and millefiori glass were stylistically attributed to a Hellenistic type, a Ptolemaic and Romano-Egyptian period type and an early imperial period type. Twelve representative fragments were studied by electron microprobe analysis and Raman microspectroscopy. Eleven of them display a Napronounced recipe with low K, Mg and P contents, typical for the Roman period. Minor differences in composition are unsystematic, not reflecting the stylistic classification. Ionic colouring agents are Mn 3+ for violet, Cu 2+ for light blue, Co 2+ for deep blue and Fe 3+ for brown translucent colours. Calcium antimonates, lead antimonate and cuprite are the colourants responsible for white, yellow and red colours, respectively, and additionally serve as opacifiers. Mixing of ionic colouring agents and opacifying colourants led to a more differentiated palette of colours. Pb was used as yellow colouring agent, as a flux material and as a stabiliser for the colourant crystals. The remaining fragment consisting of a K-pronounced but still Na-bearing glass matrix was most likely produced during the Middle Ages or later.

This paper reports the growth of silicon nanocrystals (SiNCs) from SiH4-O-2 plasma chemistry. The formation of an oxynitride was avoided by using O-2 instead of the widely used N2O as precursor. X-ray photoelectron spectroscopy is used to prove the absence of nitrogen in the layers and determine the film stoichiometry. It is shown that the Si rich film growth is achieved via nonequilibrium deposition that resembles a interphase clusters mixture model. Photoluminescence and Fourier transformed infrared spectroscopy are used to monitor the formation process of the SiNCs, to reveal that the phase separation is completed at lower temperatures as for SiNCs based on oxynitrides. Additionally, transmission electron microscopy proves that the SiNC sizes are well controllable by superlattice configuration, and as a result, the optical emission band of the Si nanocrystal can be tuned over a wide range

Superlattices of Si-rich silicon nitride and Si 3 N 4 are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si 3 N 4 . Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10 5 times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si 3 N 4 reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si 3 N 4 band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si 3 N 4 interface defect literature. In addition, the role of Si 3 N 4 valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si 3 N 4 -embedded Si NCs are suggested. V C 2014 AIP Publishing LLC. [http://dx.

For future 4-junction Ge based multi-junction solar cells, the current generated in the Ge sub-cell gets very important. We developed an efficient rear-side passivation stack, which results in minority carrier lifetimes (τ eff ) ≈ 200 µs and investigated its performance in an accelerated aging experiment (1 MeV electron irradiation). The aging caused a strong lifetime decrease down to τ eff = 4 µs, whereas the carrier mobility stayed constant. These experimental values provide the basis for Beginning-of-Life and End-of-Life solar cell simulations, which show that the potential of the rear-side passivation for 3-junction solar-cell performance is limited, but very promising for 4junction solar cells.

Silicon nanocrystals (Si NCs) are a promising candidate for the top cell of Si tandem solar cells since their bandgap exceeds that of bulk silicon and can be tuned by adjusting nanocrystal size. Due to this effect, size control is required to maintain a uniform bandgap throughout a Si NC film. This can be achieved by annealing superlattices of Si-rich and stoichiometric dielectrics. This paper reviews the progress that has been made using host matrices SiO2, Si3N4, and SiC. Si NCs in SiO2 show excellent NC size and shape control and strong quantum-confinement-related photoluminescence, however electrical conductivity is poor. Ordering and size control is also obtained in Si3N4, but conclusive evidence of quantum confinement is lacking. Preparing ordered but separated Si NCs in SiC is difficult, but the narrow parameter space in which this is possible has been elucidated, good electrical conductivity was obtained, and functioning single-junction and tandem cells have been produced. Si NC formation can now be well-controlled in all three materials, and the key weaknesses for photovoltaics have been identified to be the electrical conductivity of SiO2, and defect density for Si3N4 and SiC. Addressing these is expected to lead to competitive Si tandem solar cells