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This study demonstrates the integration of a thin film transistor (TFT) and resistive random-access memory (RRAM) to form a one-transistor-one-resistor (1T1R) configuration. With the concept of the current conducting direction in RRAM and TFT, a triple-layer stack design of Pt/InGaZnO/Al2O3 is proposed for both the switching layer of RRAM and the channel layer of TFT. This proposal decreases the complexity of fabrication and the numbers of photomasks required. Also, the robust endurance and stable retention characteristics are exhibited by the 1T1R architecture for promising applications in memory-embedded flat panel displays.

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In this work, the relation between post annealing temperature and electrical characteristic on high mobility a-IZTO TFTs was investigated. The 400℃-annealed a-IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm 2 /Vs, V th of -2.8 V and sub-threshold swing of 0.25 V/decade. Both shallow trap states of a-IZTO film and interface trap states at the a-IZTO/SiO 2 interface decreased to 2.16×10 17 cm -3 eV -1 and 4.38×10 12 cm -2 eV -1 , respectively with 400℃ annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a-IZTO TFTs. Figure 4. Hysteresis loop of (a) as-deposited, (b) 200℃annealed and (c) 400℃-annealed a-IZTO TFTs.