This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tinoxide (AZTO) and HfO 2 -film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO 2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO 2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.Index Terms-Resistive switching, RRAM, AZTO, localized conducting filament.

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