Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO<sub>2</sub> Layer

Liu, Po–Tsun; Yang, Fan; Chen, Chun Ching

doi:10.1109/led.2014.2363491

Cited by 24 publications

(14 citation statements)

References 11 publications

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“…In bilayer RRAM devices, the CF prefers to connect or disrupt at the interface and one of the bilayer plays the role of virtual electrode. Such RS mechanism enhances the uniformity of bilayer RRAM device …”

Section: Resultsmentioning

confidence: 96%

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Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Zhang

Huang

Xia

et al. 2019

Adv Elect Materials

139

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important role in flexible electronics. [1][2][3] Nonvolatile resistive random access memories (RRAM) have simple structure, excellent scalability, high switching speed, good retention, and low power consumption. Thus, they have been considered as promising candidates for charge-based memory and Flash. [4,5] In terms of flexible RRAM (FRRAM) applications, the investigations mainly focus on device processing, resistive switching (RS) behaviors, and mechanical flexibilities. [6][7][8] Many efforts have been devoted to achieve high performance FRRAMs with both small RS parameters variation and excellent flexibility. One of the representative obstacles is the nonuniformity of RS parameters, which leads to false programming and gives rise to readout hazards. [9,10] Some FRRAMs demonstrated fast programming speed, large storage window, excellent flexibility, and mechanical endurance. However, the coefficients of variation for the RS parameters were unexpectedly high. [10] On the basis of conducting filament (CF) theory in RRAM devices, the switching mechanism is highly depended on the CF formation/disruption during the writing/programming process, which in turn affects the device performance. As concerned as the valence change memory (VCM) RRAM, oxygen vacancies play an important role in a redox reaction, which determines the filament morphology. In order to enhance the performance and improve the distribution of switching parameters, bilayer RS structure such as /indium tin oxide (ITO), is proposed. Such RS layer can control the formation/rupture of CF consisting of oxygen vacancies. [11][12][13] HfO 2 and TiO 2 are typical high dielectric constant transition metal oxides in complementary metal oxide semiconductor (CMOS) integrated circuit applications. Due to the simple compositions and good compatibilities with CMOS processing, they have been widely investigated for memory device applications. [14] Especially, HfO 2 /TiO 2 bilayer structure has exhibited desired features, including self-rectification, multiple resistance states, self compliance, and stable bipolar RS property. [14,15] Bilayer structure based RRAM can operate at low voltage, which decreases the heat accumulation in the operating process and reduces the power consumption. [16] Thus, it is speculated that the stability of bilayer HfO 2 /TiO 2 FRRAM device will be improved by avoiding the undesirable heating during the read/write process. The low energy consumptions and high stabilities are highly desirable for wearable electronic applications.The authors declare no conflict of interest. Figure 6. a) The 1000th, 1500th, and 2000th I-V curves taken on FRRAM device. b) I-V curves at different stop voltages ranged between −1.3 and −1.6 V with step of 0.1 V.www.advancedsciencenews.com

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Section: Resultsmentioning

confidence: 96%

“…[36] After the forming process, oxygen ions (O 2− ) are created accompanying oxygen vacancies (Vo 2+ ) within the switching layer. In bilayer RRAM devices, the CF prefers to connect or disrupt at the interface and one of the bilayer plays the role of virtual electrode.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Zhang

Huang

Xia

et al. 2019

Adv Elect Materials

139

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show abstract

“…However, the conventional Flash memory is difficult to be integrated into flexible substrates due to the gate oxide quality degradation for the limited low-temperature process 10,11 . Notably, nonvolatile resistive random access memory (RRAM) was proposed and is the most promising candidate because of its simple structure, low temperature process, high scalability, and high packaging density 12–14 . A large amount of metal oxides have been studied for the RRAM applications 15–18 .…”

Section: Introductionmentioning

confidence: 99%

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Gan

Liu

Chien

et al. 2019

Sci Rep

Self Cite

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The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>105), low operation voltage, high endurance (>1.4 × 102 cycles), and large retention memory window (>105). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.

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“…To enable the SiC-based memristor to integrate into the brain-inspired chip and efficiently deal with the massive and diverse data, the uniformity of the switching parameters such as R ON , R OFF, V SET , and V RESET need to be improved in the successive switching cycles. Exploring effective ways to improve the switching uniformity of the SiC memristor is highly demanded [15][16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Artificial Synapse Consisted of TiSbTe/SiCx:H Memristor with Ultra-high Uniformity for Neuromorphic Computing

Chen

Leng

et al. 2022

Nanomaterials

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To enable a-SiCx:H-based memristors to be integrated into brain-inspired chips, and to efficiently deal with the massive and diverse data, high switching uniformity of the a-SiC0.11:H memristor is urgently needed. In this study, we introduced a TiSbTe layer into an a-SiC0.11:H memristor, and successfully observed the ultra-high uniformity of the TiSbTe/a-SiC0.11:H memristor device. Compared with the a-SiC0.11:H memristor, the cycle-to-cycle coefficient of variation in the high resistance state and the low resistance state of TiSbTe/a-SiC0.11:H memristors was reduced by 92.5% and 66.4%, respectively. Moreover, the device-to-device coefficient of variation in the high resistance state and the low resistance state of TiSbTe/a-SiC0.11:H memristors decreased by 93.6% and 86.3%, respectively. A high-resolution transmission electron microscope revealed that a permanent TiSbTe nanocrystalline conductive nanofilament was formed in the TiSbTe layer during the DC sweeping process. The localized electric field of the TiSbTe nanocrystalline was beneficial for confining the position of the conductive filaments in the a-SiC0.11:H film, which contributed to improving the uniformity of the device. The temperature-dependent I-V characteristic further confirmed that the bridge and rupture of the Si dangling bond nanopathway was responsible for the resistive switching of the TiSbTe/a-SiC0.11:H device. The ultra-high uniformity of the TiSbTe/a-SiC0.11:H device ensured the successful implementation of biosynaptic functions such as spike-duration-dependent plasticity, long-term potentiation, long-term depression, and spike-timing-dependent plasticity. Furthermore, visual learning capability could be simulated through changing the conductance of the TiSbTe/a-SiC0.11:H device. Our discovery of the ultra-high uniformity of TiSbTe/a-SiC0.11:H memristor devices provides an avenue for their integration into the next generation of AI chips.

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Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO₂ Layer

Cited by 24 publications

References 11 publications

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Artificial Synapse Consisted of TiSbTe/SiCx:H Memristor with Ultra-high Uniformity for Neuromorphic Computing

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Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO2 Layer

Cited by 24 publications

References 11 publications

Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide‐Based Resistive Switching Memory

Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide‐Based Resistive Switching Memory

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Artificial Synapse Consisted of TiSbTe/SiCx:H Memristor with Ultra-high Uniformity for Neuromorphic Computing

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Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO₂ Layer

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory