Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Gan, Kai Jhih; Liu, Po–Tsun; Chien, Ta Chun; Ruan, Dun-Bao; Sze, Simon M.

doi:10.1038/s41598-019-50816-7

Cited by 42 publications

(20 citation statements)

References 39 publications

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“…As depicted in Figure 3a, the LRS was written with a pulse of +2.2V applied for 1 second, and then kept at 0V for 10 seconds, leading to the HRS state (see heatmap of all data in Figure S13). Remarkably, the ON/OFF ratio at 0.5 V reached a value of ~1x10 4 , which is comparable with the values reported for gallium-based oxide conductivebridging RAM 18 or graphene oxide devices. 7,[33][34][35] In addition, the LRS and HRS were monitored every 500 ms by applying a read potential of 0.2 V. Importantly, as demonstrated in Figure 3b, the states were preserved for more than one hour.…”

Section: Resultssupporting

confidence: 87%

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Resistive Switching Observation in a Gallium-Based Liquid Metal/Graphene Junction

Gutierrez

Sousa

Mas‐Torrent

et al. 2020

ACS Appl. Electron. Mater.

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Resistive switching effect is observed for a gallium-indium/gallium oxide/graphene junction. The use of a gallium-based liquid metal alloy, in this case, the eutectic gallium-indium with its native gallium oxide skin, directly provides the metal top contact and the oxide layer needed to fabricate a memory. Graphene is used as bottom electrode due to its electrical properties and, importantly, because it prevents the formation of alloys, leading to a stable simple junction.With this structure, the ON/OFF ratio at 0.5 V between the high resistance state (HRS) and low resistance state (LRS) reached is ~ 10 4 in ambient conditions. The deposition of an additional switching layer is not needed compared to other resistive random access memories, which makes this system less complex to fabricate. The migration of the oxygen atoms of the oxide layer would 2 be intuitively considered the main reason for the modulation of the tunneling junction resistance but, we suggest that this is not the case and instead of that, charge-trapping/detrapping at the very interface may dominate the switching function.

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Section: Resultssupporting

confidence: 87%

“…10 Interestingly for the purpose of this work, the gallium oxide is currently considered a very promising material for RRAM. 17,18 For example, a non-filamentary memristive behavior was shown for an amorphous gallium oxide thin film embedded between two electrodes (Pt and ITO).…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Observation in a Gallium-Based Liquid Metal/Graphene Junction

Gutierrez

Sousa

Mas‐Torrent

et al. 2020

ACS Appl. Electron. Mater.

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“…Gallium oxide, a wide band gap material (∼4.8 eV) with a very large breakdown electric field (∼8 MV/cm) and a relatively large dielectric constant (ϵ r = 10–16) , is considered an attractive candidate in memristive systems because it can sustain high electric fields without undergoing permanent damage. − Furthermore, it can be sensitively tuned from an intrinsically insulating oxide to a low resistance suboxide based on subtle variations in composition. , Studies specific to resistive switching in gallium oxide include bipolar, ,− or unipolar switching, , depending upon the voltage polarity or magnitude during the set and reset processes. , The switching mechanism in these devices is influenced by cell architecture as well as the choice of active electrode materials.…”

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confidence: 99%

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

et al. 2021

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In this work, native GaO x is positioned between bulk gallium and degenerately doped p-type silicon (p + -Si) to form Ga/GaO x /SiO x /p + -Si junctions. These junctions show memristive behavior, exhibiting large current−voltage hysteresis. When cycled between −2.5 and 2.5 V, an abrupt insulator−metal transition is observed that is reversible when the polarity is reversed. The ON/ OFF ratio between the high and low resistive states in these junctions can reach values on the order of 10 8 and retain the ON and OFF resistive states for up to 10 5 s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.

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“…In recent years, transparent amorphous oxide semiconductors (TAOSs) have attracted much attention in the novel application of electronic devices [ 1 , 2 ] such as thin film transistors [ 3 , 4 ], sensors [ 5 ], and memory [ 6 , 7 , 8 ]. From many options of TAOSs materials, InGaZnO is the most widely studied because of high mobility, excellent reliability and good uniformity.…”

Section: Introductionmentioning

confidence: 99%

Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

et al. 2021

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In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor/-rich IWZO (IWZOx/IWZOy, x < y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 × 104 cycles). Meanwhile, the memory window of IWZOx/IWZOy can even be maintained over 104 s at 85 °C. Those improvements can be attributed to the oxygen vacancy distribution in switching layers, which may create a suitable environment for the conductive filament formation or rupture. Therefore, it is believed that the specific stacking bilayer IWZO CBRAM might further pave the way for emerging memory applications.

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Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Cited by 42 publications

References 39 publications

Resistive Switching Observation in a Gallium-Based Liquid Metal/Graphene Junction

Resistive Switching Observation in a Gallium-Based Liquid Metal/Graphene Junction

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

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