High-performance Ge CMOS FinFETs directly on thin silicon on insulator (SOI) wafer are demonstrated. For the first time, NFET of L channel =120nm and Fin width=40nm with high I on /I off ratio (>10 5 ), excellent drain induced barrier lowering (DIBL) (110mV/V) and subthreshold swing (S.S) (144mV/dec) has been shown. Both Ge n-and p-channel FinFETs with multi-fins have been achieved. Even the NFET of L channel =90nm exhibits a pretty well on-off behavior after forming gas annealing.

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Abstract-In this letter, we present a high performance Ge n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a NiGe Schottky junction source/drain fabricated using phosphorus dopant segregation. Phosphorus atoms were implanted into NiGe and then driven toward the NiGe/p-Ge interface to depin the Fermi level and form a Schottky junction. A high effective barrier height ( Bp ) of 0.57 eV, resulting in a high junction current ratio of >10 4 at the applied voltage |V a | = ±1 V. The nMOSFET exhibited a high I ON /I OFF ratio of ∼8 × 10 3 (I D ), ∼10 5 (I S ), and a subthreshold swing of 138 mV/decade. The nMOSFET developed in this letter exhibited greater transconductance and a drain leakage current that is more than two orders of magnitude lower compared with nMOSFETs with the conventional n + /p junction.

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