Using the nanostructrued Si(100)-2ϫn surface as a template, we have obtained large-scale well-aligned Ga nanowire arrays. High-resolution scanning tunneling microscopy ͑STM͒ images reveal that the deposited Ga atoms adsorb predominantly on top of the Si(100)-2ϫ1 dimer rows and form a stable local 2ϫ2 structure so as effectively to remove Si dangling bonds states and saturate all Ga electron valency, a vital step that leads to the success of the method. An interesting observation is the formation of antiphase boundaries on the 2 ϫ2-Ga phase. In this case, zigzag patterns were observed in the filled-state STM images, which provides further evidence for the parallel dimer model of the 2ϫ2-Ga reconstruction proposed previously.
In this study, MgIn2O4 UV photodetectors with metal-semiconductor-metal structure were deposited by RF sputtering using a single MgIn2O4 target. The characteristics of deposited MgIn2O4 thin films as well as fabricated PDs with different oxygen flow ratios and annealing temperatures were explored. The as-deposited MgIn2O4 thin film is a transparent material with transmittance of over 75% in the visible region and the wide bandgap of above 3.9 eV, indicating MgIn2O4 is a potential candidate for UV-sensing applications. The MgIn2O4 PD with oxygen flow ratio of 2% and post-annealed at 300 °C shows the best performance due to the enhanced UV absorption and an extremely low dark current. Such device shows a dark current of 5.00 × 10−13 A, a comparable photo-to-dark current ratio of 1.82 × 107, the responsivity of 1.38 A W−1, and an UV-to-visible rejection ratio of 4.3 × 103.
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