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We report the demonstration of the continuous wave laser action on GaN-based vertical cavity surface emitting lasers at room temperature. The laser structure consists of a ten-pair Ta2O5/SiO2 distributed Bragg reflector (DBR), a 7λ-thick optical cavity, ten-pairs InGaN/GaN multiquantum wells with an AlGaN electron blocking layer, and a 29-pair AlN/GaN DBR. The laser has a threshold current of about 9.7 mA corresponding to the current density of about 12.4 kA/cm2 and a turn-on voltage about 4.3 V at 300 K. The lasing wavelength was 412 nm with a linewidth of about 0.5 nm. A spontaneous emission coupling efficiency factor of about 5×10−3 and the degree of polarization of about 55% were measured, respectively. The laser beam has a narrow divergence angle of about 8°.

High efficiency white light-emitting diodes with superior color-mixing have been investigated. It is suggested that the patterned remote phosphor structure could improve the uniformity of angular-dependent correlated color temperature (CCT) and achieve high chromatic stability in wider operating current range, as compared to the conventional remote phosphor coating structure. In this experiment, we employed a pulse spray coating method to place the patterned phosphor on the package and to leave a window region. The window area, a clear space without coating of the phosphor not only increases the extraction efficiency of blue rays at large angle, but also improves the stability of angular-dependent CCT. Moreover, the CCT deviation could be reduced from 1320 K to 266 K by this patterned remote phosphor method, and the stray blue/yellow light within the package can be effectively reduced and controlled. The design was verified both experimentally and theoretically.

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