FINFET devices have demonstrated convincing low leaky I off current for the last decade and continue to take the leading role approaching to 10nm channel length. The imperative must for the next generation MOSFET transistors with 3-dimensional fin structure overwhelmingly replace the traditional MOSFET ones. However, the threshold voltages (Vt), in some cases, may turn out to be negative on NFINFET devices, while, on the other hand, positive on PFINFET devices. A new algorithm is proposed to exactly characterize some specific physical quantities and thus is used to compare the differences between N-channel and P-channel transistors. In this paper, a modified formula concerning current-voltage characteristic curves is used to fit the measured data. One can then simultaneously determine several physical quantities by way of this fitting.

This study recycles titanium dioxide (TiO2) that is contained in waste selective non-catalytic reduction (SNCR) catalysts using acid or alkali. The waste SNCR is then filtered, baked, ground and calcined to form a photo-catalytic powder. The nano-TiO2 photo-catalysts that are obtained using both processes are then tested and compared. The two TiO2 photo-catalysts that are produced from waste SNCR catalysts have a diameter of 30–40 nm. Energy dispersive spectrometry (EDS) and inductively coupled plasma (ICP) are used to determine the elemental composition of TiO2 and X-ray diffraction (XRD) is used to determine the crystalline phase. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) are used to determine the surface morphology, the structure and the particle size. The effect of placing porous TiO2 in a suspension is also determined. This study demonstrates the production of a photo-catalyst from an SNCR catalyst and its effect in advanced oxidation processes (AOP). When everdirect supra turquoise blue (FBL) dye wastewater is degraded in the presence of ultraviolet (UV) /TiO2, more than 90% of the total oxidizable carbon (TOC) is removed.

FINFET devices have generated an alternative convincing next-generation foundation in IC industry. The outrageously leaky I off current gets controlled as the channel length is imperatively shortened down to 40nm and below. Somehow, the 3-dimensional fin structure makes itself distinct from the traditional MOSFET transistors, e.g., the threshold voltages (Vt). In some channel lengths, Vt may turn to be negative on NFINFET, while it may turn to be positive on PFINFET. It is intriguing to use or propose another reliable way to determine threshold voltages. In this study, a reliable and direct way is proposed using modeled current-voltage characteristic curves to fit measured ones. After fitting, some other physical quantities can be simultaneously determined giving persuasive understanding on the devices.

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