Aneurysm clips within stereotactic treatment volumes enhance spatial accuracy but perturb the dose distribution. The dose perturbations caused by a standard titanium alloy aneurysm clip (Ti6Al4V) have been measured with Gafchromic EBT film. The maximum dose perturbation was an increase of 6 % within 0.5 mm of the beam entry surface of the clip, and a decrease of 7 % within 0.5 mm of the beam exit surface of the clip. Results also showed perturbations to film readout due to the presence of micro dust particles on the film affecting optical properties at high spatial resolution (21um) scanning. Special procedures should be used when film is immersed in water, dried and then read at high spatial resolution. We recommend that films should be immersed only in distilled water and tools such as canned air puffs should be used to clean films without scratches.

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We investigate the synergism effect of total ionizing dose (TID) on single-event burnout (SEB) for commercial enhancement-mode AlGaN/GaN high-electron mobility transistors. Our experimental results show that the slight degradation of devices caused by gamma rays can affect the stability of the devices during the impact of high energy particles. During heavy ion irradiation, the safe working values of drain voltage are significantly reduced for devices which have already been irradiated by 60 Co gamma rays before. This could be attributed to more charges trapped caused by 60 Co gamma rays, which make GaN devices more vulnerable to SEB. Moreover, the electrical parameters of GaN devices after 60 Co gamma and heavy-ion irradiations are presented, such as the output characteristic curve, effective threshold voltages, and leakage current of drain. These results demonstrate that the synergistic effect of TID on SEB for GaN power devices does in fact exist.