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Ultraviolet electroluminescence from Schottky type LED device is demonstrated. The device prototype is based on Schottky junctions formed between Au and the top ends of ZnO nanowire arrays. Rectifying current-voltage characteristics are observed, and three different charge transport mechanisms are discussed in detail. Excitonic electroluminescence at around 380 nm is detected at high forward bias and the linear relationship between intensity and current suggests a LED device performance. The observation of LED signals from the simple Schottky structure provides a potential supplement to the category of ultraviolet LED devices. Published by AIP Publishing.

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Energy harvesting in metamaterial-based solar cells containing an ultrathin α-Si film sandwiched between a silver (Ag) substrate and a square array of Ag nanodisks and combined with an indium tin oxide (ITO) anti-reflection layer is investigated.