This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30µm, 6×10 15 cm −3-doped epitaxial layer. Extensive simulations have been performed to design, optimize and analyze the structure of the FJ_JBS rectifier. The fabricated FJ_JBS shows that breakdown voltage (BV) and differential R on,sp are 3.4 kV, yielding the highest BV value reported for 4H-SiC FJ diodes, and 5.67 m •cm 2 , respectively. Compared with the conventional JBS, the BV value of FJ_JBS increases by 33.3% and the R on,sp only slightly rises by 6.2%. The corresponding Baliga figure-of-merit (BFOM) (4 BV 2 /R on−sp) of this FJ_JBS diode is 8.16 GW/cm 2. INDEX TERMS 4H-SiC, FJ structure, JTE termination, FJ_JBS.

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